Transport spectroscopy of induced superconductivity in the three-dimensional topological insulator HgTe

Abstract

The proximity-induced superconducting state in the 3-dimensional topological insulator HgTe has been studied using electronic transport of a normal metal-superconducting point contact as a spectroscopic tool (Andreev point contact spectroscopy). By analyzing the conductance as a function of voltage for various temperatures, magnetic fields and gate-voltages, we find evidence, in equilibrium, for an induced order parameter in HgTe of $70\mu$eV and a niobium order parameter of $1.1$meV. To understand the full conductance curve as a function of applied voltage we suggest a non-equilibrium driven transformation of the quantum transport process where the relevant scattering region and equilibrium reservoirs change with voltage. This implies that the spectroscopy probes the superconducting correlations at different positions in the sample, depending on the bias voltage.

Updated author list

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Cited by in corpus (13)

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• Proximity-induced superconductivity within the InAs/GaSb edge conducting state
• Robust and fragile Majorana bound states in proximitized topological insulator nanoribbons
• Conductance oscillations and zero-bias anomaly in a single superconducting junction to a three-dimensional $B{i}_{2}T{e}_3$ topological insulator
• Directional electron-filtering at a superconductor-semiconductor interface
• Waiting time distributions in Quantum spin hall based heterostructures
• Cyclotron resonance induced photogalvanic effect in surface states of 200 nm thick strained HgTe films
• Transport in a periodically driven tilted lattice via the extended reservoir approach: Stability criterion for recovering the continuum limit
• Mixed higher-order topology and nodal and nodeless flat band topological phases in a superconducting multiorbital model
• Coalescence of Andreev bound states on the surface of a chiral topological semimetal
• Confinement-induced zero-bias peaks in conventional superconductor hybrids