Tunneling conductance of graphene NIS junctions

Abstract

We show that in contrast to conventional normal metal-insulator-superconductor (NIS) junctions, the tunneling conductance of a NIS junction in graphene is an oscillatory function of the effective barrier strength of the insulating region, in the limit of a thin barrier. The amplitude of these oscillations are maximum for aligned Fermi surfaces of the normal and superconducting regions and vanishes for large Fermi surface mismatch. The zero-bias tunneling conductance, in sharp contrast to its counterpart in conventional NIS junctions, becomes maximum for a finite barrier strength. We also suggest experiments to test these predictions.

v3, Final published version

References in corpus (6)

• Electric Field Effect in Atomically Thin Carbon Films
• Chiral tunneling and the Klein paradox in graphene
• Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
• Unconventional Integer Quantum Hall effect in graphene
• Specular Andreev reflection in graphene
• Josephson effect in ballistic graphene

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