Andreev reflection in bilayer graphene
arXiv:cond-mat/0701045 · doi:10.1103/PhysRevB.75.195322
Abstract
We consider the conductance of a normal-superconductor junction in bilayer graphene in the framework of the Dirac-Bogoliubov-De-Gennes equation. A remarkable suppression of the conductance at voltages just below the superconducting gap is found. This can be understood in terms of the spinor structures of the electron and hole excitations, in particular the reflected valence band hole being orthogonal to the incoming electron at normal incidence. Minor changes in response to referee reports, references updated.
9 pages, 8 figures
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- Andreev reflection in graphene nanoribbons
- Cross-over from retro to specular Andreev reflections in bilayer graphene
- Tunable Supercurrent at the Charge Neutrality Point via Strained Graphene Junctions
- Enhanced Specular Andreev reflection in bilayer graphene
- External gates and transport in biased bilayer graphene
- Anisotropic Andreev Reflection and Josephson Effect in Ballistic Phosphorene
- Andreev reflection of massive pseudospin-1 fermions
- Superconducting proximity effect on a two-dimensional Dirac electron system
- Andreev reflection in Euler materials
- Andreev Reflection in a Bilayer Graphene Junction: Role of Spatial Variation of the Charge Neutrality Point
- Controllable Andreev Bound States in Bilayer Graphene Josephson Junction from Short to Long Junction Limits
- Andreev and normal reflections in gapped bilayer graphene-superconductor junctions
- Andreev reflection in 2D relativistic materials with realistic tunneling transparency in normal-metal-superconductor junctions
- Quantum Transport Properties of an Exciton Insulator/Superconductor Hybrid Junction
- Specular-Andreev reflection and Andreev interference in an Ising superconductor junction