Tunneling Conductance of The Graphene SNS Junction with a Single Localized Defect
arXiv:1006.1386 · doi:10.1134/S1063776110040084
Abstract
We study the electronic transport in a graphene-based superconductor-normal(graphene)-superconductor (SNS) junction by use of the Dirac-Bogoliubov-de Gennes equation. We consider the properties of tunneling conductance through an undoped strip of graphene with heavily doped superconducting electrodes in the dirty limit. We find that spectrum of Andreev bound states are modified in the presence of single localized defect in the bulk. The minimum tunneling conductance remains the same and this result doesn't depend on the actual location of the imperfection.
10 pages, 4 figures
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