Josephson junctions of Weyl and multi-Weyl semimetals
arXiv:1909.12308 · doi:10.1103/PhysRevB.101.075110
Abstract
We study a Josephson junction involving a Weyl and a multi-Weyl semimetal separated by a barrier region of width created by putting a gate voltage over the Weyl semimetal. The topological winding number of such a junction changes across the barrier. We show that for such junctions, where is the critical current and the normal state resistance, in the thin barrier limit, has a universal value independent of the barrier potential. We provide an analytical expression of the Andreev bound states and use it to demonstrate that the universal value of is a consequence of change in topological winding number across the junction. We also study AC Josephson effect in such a junction in the presence of an external microwave radiation, chart out its current-voltage characteristics, and show that the change in the winding number across the junction shapes the properties of its Shapiro steps. We discuss the effect of increasing barrier thickness on the above-mentioned properties and chart out experiments which may test our theory.
arXiv commentv2. 10 figs, 11 pages. Refs added and submitted to journal
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