Josephson junctions of Weyl and multi-Weyl semimetals

Abstract

We study a Josephson junction involving a Weyl and a multi-Weyl semimetal separated by a barrier region of width $d$ created by putting a gate voltage $U_0$ over the Weyl semimetal. The topological winding number of such a junction changes across the barrier. We show that $I_c{R}_N$ for such junctions, where $I_c$ is the critical current and $R_N$ the normal state resistance, in the thin barrier limit, has a universal value independent of the barrier potential. We provide an analytical expression of the Andreev bound states and use it to demonstrate that the universal value of $I_c{R}_N$ is a consequence of change in topological winding number across the junction. We also study AC Josephson effect in such a junction in the presence of an external microwave radiation, chart out its current-voltage characteristics, and show that the change in the winding number across the junction shapes the properties of its Shapiro steps. We discuss the effect of increasing barrier thickness $d$ on the above-mentioned properties and chart out experiments which may test our theory.

v2. 10 figs, 11 pages. Refs added and submitted to journal

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Cited by in corpus (13)

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• Supercurrent diode effect in thin film Nb tracks
• Non-Linear Hall Effect in Multi-Weyl Semimetals
• Proximity-induced equilibrium supercurrent and perfect superconducting diode effect due to band asymmetry
• Photogalvanic response in multi-Weyl semimetals
• Equilibrium current in a Weyl-semimetal - superconductor heterostructure
• Andreev bound states in superconductor-barrier-superconductor junctions of Rarita-Schwinger-Weyl semimetals
• Andreev bound states in Josephson junctions of semi-Dirac semimetals
• Supergap and subgap enhanced currents in asymmetric {S_1FS_2} Josephson junctions
• Quantum anomaly and anomalous Josephson effect in inversion asymmetric Weyl semimetals
• Nature of Andreev bound states in Josephson junctions of triple-point semimetals
• Delta-function-potential junctions with quasiparticles occupying tilted bands with quadratic-in-momentum dispersion
• Transmission through rectangular potentials in semimetals featuring quadratic dispersion