Adiabatic quantum pumping in graphene NIS junctions

Abstract

We investigate adiabatic quantum pumping through a normal metal-insulator-superconductor (NIS) junction in a monolayer of graphene. The pumped current is generated by periodic modulation of two gate voltages, applied to the insulating and superconducting regions respectively. In the bilinear response regime and in the limit of a thin high insulating barrier, we find that the presence of the superconductor enhances the pumped current per mode by a factor of 4 at resonance. Compared to the pumped current in an analogous semiconductor NIS junction, the resonances have a $\pi /2$ phase difference. We also predict experimentally distinguishable differences between the pumped current and the tunneling conductance in graphene NIS junctions.

4 pages, 3 figures

References in corpus (12)

• Electric Field Effect in Atomically Thin Carbon Films
• Chiral tunneling and the Klein paradox in graphene
• Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
• Bipolar supercurrent in graphene
• Specular Andreev reflection in graphene
• Phase Coherent Transport of Charges in Graphene Quantum Billiard
• Tunneling conductance of graphene NIS junctions
• Adiabatic pumping through interacting quantum dots
• Pumping through a quantum dot in the proximity of a superconductor
• Adiabatic pumping in a Superconductor-Normal-Superconductor weak link
• Quantum pumping in a ballistic graphene bilayer
• Gate driven adiabatic quantum pumping in graphene