Gate driven adiabatic quantum pumping in graphene
arXiv:1007.3161 · doi:10.1016/j.ssc.2010.12.042
Abstract
We propose a new type of quantum pump made out of graphene, adiabatically driven by oscillating voltages applied to two back gates. From a practical point of view, graphene-based quantum pumps present advantages as compared to normal pumps, like enhanced robustness against thermal effects and a wider adiabatic range in driving frequency. From a fundamental point of view, apart from conventional pumping through propagating modes, graphene pumps can tap into evanescent modes, which penetrate deeply into the device as a consequence of chirality. At the Dirac point the evanescent modes dominate pumping and give rise to a universal response under weak driving for short and wide pumps, even though the charge per unit cycle in not quantized.
7 pages, 3 figures. Article for the 2010 Special Issue of Solid State Communications on graphene. Published version
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- Strain Controlled Spin and Charge Pumping in Graphene Devices via Spin-orbit Coupled Barriers
- Effects of doping and bias voltage on the screening in AAA-stacked trilayer graphene
- Goos-Hänchen Shifts in AA-Stacked Bilayer Graphene Superlattices
- How to detect a genuine quantum pump effect in graphene?
- Adiabatic quantum pumping through surface states in 3D topological insulators
- Nonadiabatic pure spin pumping in zigzag graphene nanoribbons with proximity induced ferromagnetism
- Adiabatic pumping in the quasi-one-dimensional triangle lattice
- Integer quantum Hall effect in AAA-stacked trilayer graphene
- Adiabatic pumping driven by moving kink and quantum standard ampere in buckled graphene nanoribbon
- Adiabatic quantum pumping in buckled graphene nanoribbon driven by a kink