Tunneling Planar Hall Effect in Topological Insulators: Spin-Valves and Amplifiers
arXiv:1601.01009 · doi:10.1103/PhysRevLett.117.166806
Abstract
We investigate tunneling across a single ferromagnetic barrier on the surface of a three-dimensional topological insulator. In the presence of a magnetization component along the bias direction, a tunneling planar Hall conductance (TPHC), transverse to the applied bias, develops. Electrostatic control of the barrier enables a giant Hall angle, with the TPHC exceeding the longitudinal tunneling conductance. By changing the in-plane magnetization direction it is possible to change the sign of both the longitudinal and transverse differential conductance without opening a gap in the topological surface state. The transport in a topological insulator/ferromagnet junction can thus be drastically altered from a simple spin-valve to an amplifier.
13 pages, pages 6-13 contain supplemental material
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