What Makes Effective Gating Possible in Two-Dimensional Heterostructures?

Abstract

Electrostatic gating provides a way to obtain key functionalities in modern electronic devices and to qualitatively alter materials properties. While electrostatic description of such gating gives guidance for related doping effects, inherent quantum properties of gating provide opportunities for intriguing modification of materials and unexplored devices. Using first-principles calculations for Co/bilayer graphene, Co/BN, and Co/benzene, as well as a simple physical model, we show that magnetic heterostructures with two-dimensional layered materials can manifest tunable magnetic proximity effects. van der Waals bonding is identified as a requirement for large electronic structure changes by gating. In particular, the magnitude and sign of spin polarization in physisorbed graphene can be controlled by gating, which is important for spintronic devices.

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Cited by in corpus (44)

• Van der Waals heterostructures for spintronics and opto-spintronics
• Colloquium: Spintronics in graphene and other two-dimensional materials
• Enhanced valley splitting in monolayer WSe2 due to magnetic exchange field
• Magnetic Proximity Effects in Transition-Metal Dichalcogenides: Converting Excitons
• Quantum Anomalous Hall Effects in Graphene from Proximity-Induced Uniform and Staggered Spin-Orbit and Exchange Coupling
• Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures
• Theory of proximity-induced exchange coupling in graphene on hBN/(Co, Ni)
• Magnetoresistance of vertical Co-graphene-NiFe junctions controlled by charge transfer and proximity-induced spin splitting in graphene
• Optospintronics in graphene via proximity coupling
• Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions
• Spin inversion in graphene spin valves by gate-tunable magnetic proximity effect at one-dimensional contacts
• Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives
• Structural, electronic and intrinsic transport in two-dimensional borophene sheets
• Spin-Lasers: Spintronics Beyond Magnetoresistance
• Asymmetric magnetic proximity interactions in MoSe${}_2$/CrBr${}_3$ van der Waals heterostructures
• Electrically tunable exchange splitting in bilayer graphene on monolayer Cr${}_2$X${}_2$Te${}_6$ with X=Ge, Si, and Sn
• Tunable magnetic textures in spin valves: From spintronics to Majorana bound states
• Spin precession in anisotropic media
• Proximity effects in Graphene and Ferromagnetic CrBr3 van der Waals Heterostructure
• Tunable spin-polarized edge currents in proximitized transition metal dichalcogenides
• Tunneling Planar Hall Effect in Topological Insulators: Spin-Valves and Amplifiers
• Giant gate-controlled proximity magnetoresistance in semiconductor-based ferromagnetic/nonmagnetic bilayers
• Optically Probing Tunable Band Topology in Atomic Monolayers
• Engineering Proximity Exchange by Twisting: Reversal of Ferromagnetic and Emergence of Antiferromagnetic Dirac Bands in Graphene/Cr${}_2$Ge${}_2$Te${}_6$
• Interfacial crystal Hall effect reversible by ferroelectric polarization
• Wurtzite spin lasers
• Spin-orbit-proximitized ferromagnetic metal by monolayer transition metal dichalcogenide: Atlas of spectral functions, spin textures and spin-orbit torques in Co/MoSe${}_2$, Co/WSe${}_2$ and Co/TaSe${}_2$ heterostructures
• Van der Waals heterostructures with spin-orbit coupling
• Spin field-effect transistor action via tunable polarization of the spin injection in a Co/MgO/graphene contact
• Magnetotransport signatures of the proximity exchange and spin-orbit couplings in graphene
• Chiral Majorana fermions in graphene from proximity-induced superconductivity
• Interfacial spin Hall effect and spin swapping in Fe|Au bilayer from first principles
• Topological insulator spin transistor
• Selected graphenelike zigzag nanoribbons with chemically functionalized edges: Implications for electronic and magnetic properties
• First-principles study of magnetism and electric field effects in 2D systems
• Proximity-induced spin-polarized magnetocaloric effect in transition metal dichalcogenides
• Gate-tunable spin exclusive or operation in a silicon-based spin device at room temperature
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• Current switching behavior mediated via hinge modes in higher-order topological phases using altermagnets
• Many-body description of two-dimensional van der Waals ferroelectric $\alpha -$In${}_2$Se${}_3$
• Gate-controlled proximity magnetoresistance in In1-xGaxAs/(Ga,Fe)Sb bilayer heterostructures