Efficient spin injection into graphene through a tunnel barrier: overcoming the spin conductance mismatch
arXiv:1411.0779 · doi:10.1103/PhysRevApplied.2.044008
Abstract
Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barrier between the electrode and graphene. Three types of barriers, h-BN, Cu(111), and graphite, of various thickness (0-3 layers) are considered and the electrically biased conductance of the Ni/Barrier/Graphene junction are calculated. It is found that the minority spin transport channel of graphene can be strongly suppressed by the insulating h-BN barrier, resulting in a high spin injection efficiency. On the other hand, the calculated spin injection efficiencies of Ni/Cu/Graphene and Ni/Graphite/Graphene junctions are low, due to the spin conductance mismatch. Further examination on the electronic structure of the system reveals that the high spin injection efficiency in the presence of a tunnel barrier is due to its asymmetric effects on the two spin states of graphene.
arXiv comment21 pages, 7 figures
References in corpus (29)
- Van der Waals heterostructures
- Density functional method for nonequilibrium electron transport
- Doping graphene with metal contacts
- Field-effect tunneling transistor based on vertical graphene heterostructures
- Substrate-induced band gap opening in epitaxial graphene
- Electronic spin transport and spin precession in single graphene layers at room temperature
- Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor
- Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
- Substrate-induced bandgap in graphene on hexagonal boron nitride
- Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
- Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
- Atomically thin boron nitride: a tunnelling barrier for graphene devices
- Graphite and graphene as perfect spin filters
- Tunneling Spin Injection into Single Layer Graphene
- Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
- Spin Injection and Detection in Magnetic Nanostructures
- Graphene Spin Valve Devices
- Linear scaling between momentum and spin scattering in graphene
- Theoretical prediction of perfect spin filtering at interfaces between close-packed surfaces of Ni or Co and graphite or graphene
- Electronic spin transport in graphene field effect transistors
- Electronic spin drift in graphene field effect transistors
- Graphene spintronics: the role of ferromagnetic electrodes
- Electrical Detection of Spin Precession in Single Layer Graphene Spin Valves with Transparent Contacts
- Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride
- Structural and electronic properties of the graphene/Al/Ni(111) intercalation-like system
- Electrical spin injection into graphene through monolayer hexagonal boron nitride
- Controlling the efficiency of spin injection into graphene by carrier drift
- Ni(111)|Graphene|h-BN Junctions as Ideal Spin Injectors
- Magnetoresistance and negative differential resistance in Ni/Graphene/Ni vertical heterostructures driven by finite bias voltage: A first-principles study
Cited by in corpus (11)
- Van der Waals heterostructures for high-performance device applications: challenges and opportunities
- Recent progress and challenges in magnetic tunnel junctions with 2D materials for spintronic applications
- Bias induced up to 100% spin-injection and detection polarizations in ferromagnet/bilayer-hBN/graphene/hBN heterostructures
- Theory of proximity-induced exchange coupling in graphene on hBN/(Co, Ni)
- What Makes Effective Gating Possible in Two-Dimensional Heterostructures?
- Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives
- Spin transport in fully hexagonal boron nitride encapsulated graphene
- Spin transport in two-layer-CVD-hBN/graphene/hBN heterostructures
- Probing Tunneling Spin Injection into Graphene via Bias Dependence
- Spin pumping into two-dimensional electron systems
- Large spin signal and spin rectification in folded-bilayer graphene