Ni(111)|Graphene|h-BN Junctions as Ideal Spin Injectors
arXiv:1110.5291 · doi:10.1103/PhysRevB.84.153406
Abstract
Deposition of graphene on top of hexagonal boron nitride (h-BN) was very recently demonstrated while graphene is now routinely grown on Ni. Because the in-plane lattice constants of graphite, h-BN, graphite-like BC2N and of the close-packed surfaces of Co, Ni and Cu match almost perfectly, it should be possible to prepare ideal interfaces between these materials which are respectively, a semimetal, insulator, semiconductor, ferromagnetic and nonmagnetic metals. Using parameter-free energy minimization and electronic transport calculations, we show how h-BN can be combined with the perfect spin filtering property of Ni|graphite and Co|graphite interfaces to make perfect tunnel junctions or ideal spin injectors (SI) with any desired resistance-area product.
4 pages, 4 figures. Accepted for publication in Physical Review B
References in corpus (7)
- Two Dimensional Atomic Crystals
- Boron nitride substrates for high-quality graphene electronics
- Doping graphene with metal contacts
- STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
- Graphite and graphene as perfect spin filters
- Theoretical prediction of perfect spin filtering at interfaces between close-packed surfaces of Ni or Co and graphite or graphene
- Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride
Cited by in corpus (17)
- Resonant tunnelling and negative differential conductance in graphene transistors
- Schottky barriers at hexagonal boron nitride/metal interfaces: a first principles study
- Tunnel Magnetoresistance with Atomically Thin Two-Dimensional Hexagonal Boron Nitride Barriers
- Electrical spin injection into graphene through monolayer hexagonal boron nitride
- Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives
- Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide
- Efficient spin injection into graphene through a tunnel barrier: overcoming the spin conductance mismatch
- Field effect doping of graphene in metal|dielectric|graphene heterostructures: a model based upon first-principles calculations
- Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction
- Realization of the electric-field driven "one-material"-based magnetic tunnel junction using van der Waals antiferromagnetic MnPX3 (X: S, Se)
- Probing Tunneling Spin Injection into Graphene via Bias Dependence
- Electronic structure and magnetic properties of the graphene/Ni3Mn/Ni(111) trilayer
- Quasi-free-standing monolayer hexagonal boron nitride on Ni
- Electronic resistances of multilayered two-dimensional crystal junctions
- High magnetoresistance of hexagonal boron nitride-graphene heterostructure-based MTJ through excited-electron transmission
- Growth Process of Hexagonal Boron Nitride in the Diffusion and Precipitation Method Studied by X-ray Photoelectron Spectroscopy
- Molecular Precursors-Induced Surface Reconstruction at Graphene/Pt(111) Interfaces