Realization of the electric-field driven "one-material"-based magnetic tunnel junction using van der Waals antiferromagnetic MnPX3 (X: S, Se)

Abstract

Presently a lot of efforts are devoted to the investigation of new two-dimensional magnetic materials, which are considered as promising for the realization of the future electronics and spintronics devices. However, the utilization of these materials in different junctions requires complicated processing that in many cases leads to unwanted parasitic effects influencing the performance of the junctions. Here, we propose the new elegant approach for the realization of the "one-material"-based magnetic tunnel junction. The several layers of 2D van der Waals MnPX3 (X: S, Se), which is insulating antiferromagnet in its ground state, are used and the effect of the applied external electric filed leads to the half-metallic ferromagnetic states for the outermost layers of the MnPX3 stack. The rich states diagram of such magnetic tunnel junction permits to precisely control its tunneling conductivity. The realized "one-material"-based magnetic tunnel junction allows to avoid all effects connected with the lattice mismatches and carriers scattering effects at the materials interfaces, giving high perspectives for the application of such systems in electronics and spintronics.

References in corpus (18)

• Spintronics: Fundamentals and applications
• Spin qubits in graphene quantum dots
• Stacking-engineered ferroelectricity in bilayer boron nitride
• Graphite and graphene as perfect spin filters
• Magnetic ground state of semiconducting transition metal trichalcogenide monolayers
• Electronic and magnetic properties of single-layer MPX${}_3$ metal phosphorous trichalcogenides
• Unfolding spinor wavefunctions and expectation values of general operators: Introducing the unfolding-density operator
• Theoretical prediction of perfect spin filtering at interfaces between close-packed surfaces of Ni or Co and graphite or graphene
• Electronic and magnetic properties of the graphene-ferromagnet interface
• Antiferromagnetic ordering in van der Waals two-dimensional magnetic material MnPS3 probed by Raman spectroscopy
• Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications
• Electronic, magnetic and optical properties of MnPX${}_3$ (X = S, Se) monolayers with and without chalcogen defects: A first-principle study
• Ni(111)|Graphene|h-BN Junctions as Ideal Spin Injectors
• Correlations in the Electronic Structure of van der Waals NiPS${}_3$ Crystals: An X-Ray Absorption and Resonant Photoelectron Spectroscopy Study
• Brillouin zone spin filtering mechanism of enhanced TMR and correlation effects in Co(0001)/h-BN/Co(0001) magnetic tunnel junction
• Dirac fermions in half-metallic ferromagnetic mixed Cr${}_{1\text{-}x}$M${}_x$PSe${}_3$ monolayers
• Charge pumping induced by magnetic texture dynamics in Weyl semimetals
• To the synthesis and characterization of layered metal phosphorus triselenides proposed for electrochemical sensing and energy applications