activity
20122020
most citedInterface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

114 citations · 430 across the 9 of their papers we have counts for

collaborators

9 papers

physics.app-ph2020★ 114 cited

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

Kiumars Aryana, John T. Gaskins, Joyeeta Nag +10

Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards…

cond-mat.mtrl-sci2014★ 46 cited

Efficient spin injection into graphene through a tunnel barrier: overcoming the spin conductance mismatch

Qingyun Wu, Lei Shen, Zhaoqiang Bai +4

Employing first-principles calculations, we investigate efficiency of spin injection from a ferromagnetic (FM) electrode (Ni) into graphene and possible enhancement by using a barr…

cond-mat.mes-hall2013

Electron transport across a metal/MoS interface: dependence on contact area and binding distance

Zhaoqiang Bai, Troels Markussen, Kristian S. Thygesen

We investigate the nature of electron transport through monolayer molybdenum dichalcogenides (MoX, X=S, Se) suspended between Au and Ti metallic contacts. The monolayer is plac…

cond-mat.mtrl-sci2013★ 55 cited

Constructing Metallic Nanoroad on MoS2 Monolayer via Hydrogenation

Yongqing Cai, Zhaoqiang Bai, Hui Pan +3

Monolayer transition metal dichalcogenides recently emerge as a new family of two-dimensional material potentially suitable for numerous applications in electronic and optoelectron…

cond-mat.mtrl-sci2013★ 49 cited

Thermal Stability and Electrical Control of Magnetization of Heusler/Oxide Interface and Non-collinear Spin Transport of Its Junction

Zhaoqiang Bai, Lei Shen, Yongqing Cai +4

Towards next-generation spintronics devices, such as computer memories and logic chips, it is necessary to satisfy high thermal stability, low-power consumption and high spin-polar…

cond-mat.mtrl-sci2013★ 102 cited

Data Storage: Review of Heusler Compounds

Zhaoqiang Bai, Lei Shen, Guchang Han +1

In the recent decade, the family of Heusler compounds has attracted tremendous scientific and technological interest in the field of spintronics. This is essentially due to their e…

cond-mat.mes-hall2013

All-Heusler giant-magnetoresistance junctions with matched energy bands and Fermi surfaces

Zhaoqiang Bai, Yongqing Cai, Lei Shen +2

We present an all-Heusler architecture which could be used as a rational design scheme for achieving high spin-filtering efficiency in the current-perpendicular-to-plane giant magn…

cond-mat.mtrl-sci2012★ 53 cited

Transition Metal Atoms Pathways on Rutile TiO2 (110) Surface: Distribution of Ti3+ States and Evidence of Enhanced Peripheral Charge Accumulation

Cai Yongqing, Bai Zhaoqiang, Chintalapati Sandhya +2

Charge transfer between metal nanoparticles and the supported TiO2 surface is primarily important for catalytic applications as it greatly affects the catalytic activity and the th…

cond-mat.mtrl-sci2012★ 11 cited

Effect of interfacial strain on spin injection and spin polarization of Co2CrAl/NaNbO3/Co2CrAl magnetic tunneling junction

Yongqing Cai, Zhaoqiang Bai, Ming Yang +1

First-principles calculations were carried out to investigate interfacial strain effects on spin injection and spin polarization of a magnetic tunnel junction consisting of half-me…