Electron transport across a metal/MoS${}_2$ interface: dependence on contact area and binding distance

Abstract

We investigate the nature of electron transport through monolayer molybdenum dichalcogenides (MoX${}_2$, X=S, Se) suspended between Au and Ti metallic contacts. The monolayer is placed ontop of the close-packed surfaces of the metal electrodes and we focus on the role of the metal-MoX${}_2$ binding distance and the contact area. Based on \emph{ab initio} transport calculations we identify two different scattering mechanisms which depend differently on the metal-MoX${}_2$ binding distance: (i) An interface resistance between the metal and the supported part of MoX${}_2$ which decreases with decreasing binding distance and increasing contact area. (ii) An edge resistance across the 1D interface between metal-supported and free-standing MoX${}_2$ which increases with decreasing binding distance and is independent on contact area. The origin of the edge resistance is a metal-induced potential shift within the MoX${}_2$ layer. The optimal metal thus depends on the junction geometry. In the case of MoS${}_2$, we find that for short contacts, L$<$6 nm, Ti electrodes (with short binding distance) gives the lowest resistance, while for longer contacts, Au (large binding distance) is a better electrode metal.