Controlling the efficiency of spin injection into graphene by carrier drift
arXiv:0811.2960 · doi:10.1103/PhysRevB.79.081402
Abstract
Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room temperature non-local spin valve measurements in cobalt/aluminum-oxide/graphene structures with an injection efficiency as high as 25%, where electrical contact is achieved through relatively transparent pinholes in the oxide. This value is further enhanced to 43% by applying a DC current bias on the injector electrodes, that causes carrier drift away from the contact. A reverse bias reduces the AC spin valve signal to zero or negative values. We introduce a model that quantitatively predicts the behavior of the spin accumulation in the graphene under such circumstances, showing a good agreement with our measurements.
4 pages, 3 color figures
References in corpus (5)
Cited by in corpus (37)
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