Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface
arXiv:1110.1242 · doi:10.1016/j.jmmm.2011.09.031
Abstract
We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al2O3 with a smooth surface. Using this composite tunnel barrier of ALD-Al2O3 and PTCA, a spin injection signal of 30 ohm has been observed from non-local magnetoresistance measurements at 45 K, revealing potentially high performance of ALD-Al2O3/PTCA tunnel barrier for spin injection into graphene.
14 pages, 3 figures, accepted to Journal of Magnetism and Magnetic Materials
References in corpus (11)
- Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
- Impurity induced spin-orbit coupling in graphene
- Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
- Tunneling Spin Injection into Single Layer Graphene
- Spin-Orbit-Mediated Spin Relaxation in Graphene
- Electron spin relaxation in graphene: the role of the substrate
- Spin Injection into a Graphene Thin Film at Room Temperature
- Manipulation of Spin Transport in Graphene by Surface Chemical Doping
- Electronic transport in locally gated graphene nanoconstrictions
- Electron-Hole Asymmetry of Spin Injection and Transport in Single-Layer Graphene
- Controlling the efficiency of spin injection into graphene by carrier drift
Cited by in corpus (14)
- Graphene Spintronics
- Colloquium: Spintronics in graphene and other two-dimensional materials
- Spin lifetimes exceeding 12 nanoseconds in graphene non-local spin valve devices
- The role of contact resistance in graphene field-effect devices
- Theory of proximity-induced exchange coupling in graphene on hBN/(Co, Ni)
- Electrical spin injection into graphene through monolayer hexagonal boron nitride
- Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition
- Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives
- Spin injection into multilayer graphene from highly spin-polarized Co2FeSi Heusler alloy
- Spin and charge transport in graphene-based spin transport devices with Co/MgO spin injection and spin detection electrodes
- Nanosecond spin lifetimes in bottom-up fabricated bilayer graphene spin-valves with atomic layer deposited AlO spin injection and detection barriers
- Enhanced spin injection in molecularly functionalized graphene via ultra-thin oxide barriers
- Spin Relaxation in Weak Localization Regime in Multilayer Graphene Spin Valves
- Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride