Manipulation of Spin Transport in Graphene by Surface Chemical Doping
arXiv:1003.0715 · doi:10.1103/PhysRevLett.104.187201
Abstract
The effects of surface chemical doping on spin transport in graphene are investigated by performing non-local measurements in ultrahigh vacuum while depositing gold adsorbates. We demonstrate manipulation of the gate-dependent non-local spin signal as a function of gold coverage. We discover that charged impurity scattering is not the dominant mechanism for spin relaxation in graphene, despite its importance for momentum scattering. Finally, unexpected enhancements of the spin lifetime illustrate the complex nature of spin relaxation in graphene.
11 Pages, 4 figures
References in corpus (13)
- Detection of Individual Gas Molecules Absorbed on Graphene
- Charged Impurity Scattering in Graphene
- Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
- Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
- Spin-orbit gap of graphene: First-principles calculations
- Quantum Hall Ferromagnetism in Graphene
- Atomic Hole Doping of Graphene
- Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering
- Graphene Spin Transistor
- The Effect of Cluster Formation on Graphene Mobility
- Theory of charged impurity scattering in two dimensional graphene
- Gold in graphene: in-plane adsorption and diffusion
- Spin relaxation times in disordered graphene
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- Absence of a transport signature of spin-orbit coupling in graphene with indium adatoms
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- Electron spin dynamics of two-dimensional layered materials
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