Electrical control of intervalley scattering in graphene via the charge state of defects

Abstract

We study the intervalley scattering in defected graphene by low-temperature transport measurements. The scattering rate is strongly suppressed when defects are charged. This finding highlights "screening" of the short-range part of a potential by the long-range part. Experiments on calcium-adsorbed graphene confirm the role of a long-range Coulomb potential. This effect is applicable to other multivalley systems, provided that the charge state of a defect can be electrically tuned. Our result provides a means to electrically control valley relaxation and has important implications in valley dynamics in valleytronic materials.

arXiv comment13 pages, 4 figures

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• Electrical band flattening, valley flux, and superconductivity in twisted trilayer graphene
• Spontaneous Valley Spirals in Magnetically Encapsulated Twisted Bilayer Graphene
• Atomistic $T$-matrix theory of disordered 2D materials: Bound states, spectral properties, quasiparticle scattering, and transport
• Crossover to the Anomalous Quantum Regime in the Extrinsic Spin Hall Effect of Graphene
• Characterization and manipulation of intervalley scattering induced by an individual monovacancy in graphene
• Weak localization measurements of electronic scattering rates in Li-doped epitaxial graphene
• Weak Localisation Driven by Pseudospin-Spin Entanglement