Observation of Resistively Detected Hole Spin Resonance and Zero-field Pseudo-spin Splitting in Epitaxial Graphene

Abstract

Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic-material to complement- or replace- silicon. At the same time, the spin properties of graphene have suggested improved capability for spin-based electronics or spintronics, and spin-based quantum computing. As a result, the detection, characterization, and transport of spin have become topics of interest in graphene. Here we report a microwave photo-excited transport study of monolayer and trilayer graphene that reveals an unexpectedly strong microwave-induced electrical-response and dual microwave-induced resonances in the dc-resistance. The results suggest the resistive detection of spin resonance, and provide a measurement of the g-factor, the spin relaxation time, and the sub-lattice degeneracy-splitting at zero-magnetic-field.

7 pages, 4 figures

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• Preferential antiferromagnetic coupling of vacancies in graphene on SiO_2: Electron spin resonance and scanning tunneling spectroscopy
• Linear polarization study of microwave-radiation-induced magnetoresistance oscillations: Comparison of power dependence to theory
• Evolution of the linear-polarization-angle-dependence of the radiation-induced magnetoresistance-oscillations with microwave power
• Temperature Dependent Zero-Field Splittings in Graphene
• Nuclear-induced dephasing and signatures of hyperfine effects in isotopically purified ${}^{13}$C graphene
• Quantized Hall conductance in graphene by nonperturbative magnetic-field-containing relativistic tight-binding approximation method
• Resistively detected electron spin resonance and g-factor in few-layer exfoliated MoS2 devices
• Spin-dependent photovoltage in graphene/MoS2-based field-effect transistors
• Electron-Spin-Resonance in a proximity-coupled MoS2/Graphene van-der-Waals heterostructure