472 citations · 1.4k across the 11 of their papers we have counts for
11 papers
Epitaxial graphene on SiC: 2D sheets, selective growth and nanoribbons
Claire Berger, Dogukan Deniz, Jamey Gigliotti +9
Epitaxial graphene grown on SiC by the confinement controlled sublimation method is reviewed, with an emphasis on multilayer and monolayer epitaxial graphene on the carbon face of…
Controlled epitaxial graphene growth within amorphous carbon corrals
James Palmer, Jan Kunc, Yike Hu +4
Structured growth of high quality graphene is necessary for technological development of carbon based electronics. Specifically, control of the bunching and placement of surface st…
Wafer bonding solution to epitaxial graphene - silicon integration
Rui Dong, Zelei Guo, James Palmer +7
The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon,…
Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks
Renaud Puybaret, John Hankinson, James Palmer +5
Patterning of graphene is key for device fabrication. We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbid…
Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors
Zelei Guo, Rui Dong, Partha Sarathi Chakraborty +9
The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene…
Observation of Resistively Detected Hole Spin Resonance and Zero-field Pseudo-spin Splitting in Epitaxial Graphene
R. G. Mani, J. Hankinson, C. Berger +1
Electronic carriers in graphene show a high carrier mobility at room temperature. Thus, this system is widely viewed as a potential future charge-based high-speed electronic-materi…