472 citations · 1.4k across the 11 of their papers we have counts for
5 papers · 1 filter
Wafer bonding solution to epitaxial graphene - silicon integration
Rui Dong, Zelei Guo, James Palmer +7
The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon,…
Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks
Renaud Puybaret, John Hankinson, James Palmer +5
Patterning of graphene is key for device fabrication. We report a way to increase or reduce the number of layers in epitaxial graphene grown on the C-face (000-1) of silicon carbid…
Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors
Zelei Guo, Rui Dong, Partha Sarathi Chakraborty +9
The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene…
Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide
Walt. A. de Heer, Claire Berger, Ming Ruan +6
After the pioneering investigations into graphene-based electronics at Georgia Tech (GT), great strides have been made developing epitaxial graphene on silicon carbide (EG) as a ne…
Directed self-organization of graphene nanoribbons on SiC
M. Sprinkle, M. Ruan, X. Wu +6
Realization of post-CMOS graphene electronics requires production of semiconducting graphene, which has been a labor-intensive process. We present tailoring of silicon carbide crys…