Remotely sensed transport in microwave photoexcited GaAs/AlGaAs two-dimensional electron system
arXiv:1311.3271 · doi:10.1063/1.4812188
Abstract
We demonstrate a strong correlation between the magnetoresistive and the concurrent microwave reflection from the microwave photo-excited GaAs/AlGaAs two-dimensional electron system (2DES). These correlations are followed as a function of the microwave power, the microwave frequency, and the applied current. Notably, the character of the reflection signal remains unchanged even when the current is switched off in the GaAs/AlGaAs Hall bar specimen. The results suggest a perceptible microwave-induced change in the electronic properties of the 2DES, even in the absence of an applied current.
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Cited by in corpus (7)
- Magneto-transport characteristics of a 2D electron system driven to negative magneto-conductivity by microwave photoexcitation
- Combined study of microwave-power/linear-polarization dependence of the microwave-radiation-induced magnetoresistance oscillations in GaAs/AlGaAs devices
- Comparative study of microwave radiation-induced magnetoresistive oscillations induced by circularly- and linearly- polarized photo-excitation
- Remote sensor response study in the regime of the microwave radiation-induced magnetoresistance oscillations
- Linear polarization study of microwave-radiation-induced magnetoresistance oscillations: Comparison of power dependence to theory
- Evolution of the linear-polarization-angle-dependence of the radiation-induced magnetoresistance-oscillations with microwave power
- Radiation-induced re-emission in a 2D electron system