Contact-induced charge contributions to non-local spin transport measurements in Co/MgO/graphene devices
arXiv:1412.6224 · doi:10.1088/2053-1583/2/2/024001
Abstract
Recently, it has been shown that oxide barriers in graphene-based non-local spin-valve structures can be the bottleneck for spin transport. The barriers may cause spin dephasing during or right after electrical spin injection which limit spin transport parameters such as the spin lifetime of the whole device. An important task is to evaluate the quality of the oxide barriers of both spin injection and detection contacts in a fabricated device. To address this issue, we discuss the influence of spatially inhomogeneous oxide barriers and especially conducting pinholes within the barrier on the background signal in non-local measurements of graphene/MgO/Co spin-valve devices. By both simulations and reference measurements on devices with non-ferromagnetic electrodes, we demonstrate that the background signal can be caused by inhomogeneous current flow through the oxide barriers. As a main result, we demonstrate the existence of charge accumulation next to the actual spin accumulation signal in non-local voltage measurements, which can be explained by a redistribution of charge carriers by a perpendicular magnetic field similar to the classical Hall effect. Furthermore, we present systematic studies on the phase of the low frequency non-local ac voltage signal which is measured in non-local spin measurements when applying ac lock-in techniques. This phase has so far widely been neglected in the analysis of non-local spin transport. We demonstrate that this phase is another hallmark of the homogeneity of the MgO spin injection and detection barriers. We link backgate dependent changes of the phase to the interplay between the capacitance of the oxide barrier to the quantum capacitance of graphene.
19 pages, 7 figures
References in corpus (12)
- Carrier Statistics and Quantum Capacitance of Graphene Sheets and Ribbons
- Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
- Tunneling Spin Injection into Single Layer Graphene
- Magnetic Moment Formation in Graphene Detected by Scattering of Pure Spin Currents
- Controlling spin relaxation in hexagonal BN-encapsulated graphene with a transverse electric field
- Manipulation of Spin Transport in Graphene by Surface Chemical Doping
- Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature
- Spin transport in high quality suspended graphene devices
- Contact induced spin relaxation in Hanle spin precession measurements
- Enhancement of spin relaxation time in hydrogenated graphene spin valve devices
- Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments
- Effect of in-situ deposition of Mg adatoms on spin relaxation in graphene
Cited by in corpus (8)
- Spin transport in high-mobility graphene on WS substrate with electric-field tunable proximity spin-orbit interaction
- How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation
- Tuneable spin injection in high-quality graphene with one-dimensional contacts
- Dry-transferred CVD graphene for inverted spin valve devices
- Charge-induced artifacts in non-local spin transport measurements: How to prevent spurious voltage signals
- A roadmap for the design of four-terminal spin valves and the extraction of spin diffusion length
- Room-temperature spin-lifetime anisotropy exceeding 60 in bilayer graphene spin valves proximity coupled to WSe
- Reliability of spin-to-charge conversion measurements in graphene-based lateral spin valves