Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments

Abstract

By successive oxygen treatments of graphene non-local spin-valve devices we achieve a gradual increase of the contact resistance area products ($R_{c}A$) of Co/MgO spin injection and detection electrodes and a transition from linear to non-linear characteristics in the respective differential dV-dI-curves. With this manipulation of the contacts both spin lifetime and amplitude of the spin signal can significantly be increased by a factor of seven in the same device. This demonstrates that contact-induced spin dephasing is the bottleneck for spin transport in graphene devices with small $R_{c}A$ values. With increasing $R_{c}A$ values, we furthermore observe the appearance of a second charge neutrality point (CNP) in gate dependent resistance measurements. Simultaneously, we observe a decrease of the gate voltage separation between the two CNPs. The strong enhancement of the spin transport properties as well as the changes in charge transport are explained by a gradual suppression of a Co/graphene interaction by improving the oxide barrier during oxygen treatment.

12 pages, 10 figures

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Cited by in corpus (7)

• Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature
• Revisiting the measurement of the spin relaxation time in graphene-based devices
• Contact-induced charge contributions to non-local spin transport measurements in Co/MgO/graphene devices
• How to solve problems in micro- and nanofabrication caused by the emission of electrons and charged metal atoms during e-beam evaporation
• Charge-induced artifacts in non-local spin transport measurements: How to prevent spurious voltage signals
• Nonlinear analog spintronics with van der Waals heterostructures
• Room-temperature spin-lifetime anisotropy exceeding 60 in bilayer graphene spin valves proximity coupled to WSe${}_2$