Transport in Graphene Tunnel Junctions
arXiv:1011.5067 · doi:10.1063/1.3554480
Abstract
We present a technique to fabricate tunnel junctions between graphene and Al and Cu, with a Si back gate, as well as a simple theory of tunneling between a metal and graphene. We map the differential conductance of our junctions versus probe and back gate voltage, and observe fluctuations in the conductance that are directly related to the graphene density of states. The conventional strong-suppression of the conductance at the graphene Dirac point can not be clearly demonstrated, but a more robust signature of the Dirac point is found: the inflection in the conductance map caused by the electrostatic gating of graphene by the tunnel probe. We present numerical simulations of our conductance maps, confirming the measurement results. In addition, Al causes strong n-doping of graphene, Cu causes a moderate p-doping, and in high resistance junctions, phonon resonances are observed, as in STM studies.
22 pages, 5 figures
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- Introduction to Graphene Electronics -- A New Era of Digital Transistors and Devices
- Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments
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- Spin-dependent thermoelectric effects in graphene based superconductor junctions
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- Probing the Electronic Structure of Graphene Near and Far from the Fermi Level via Planar Tunneling Spectroscopy
- Evidence for incompressible states in a metal graphene tunnel junction in high magnetic field