Electrically Controlled Adsorption of Oxygen in Bilayer Graphene Devices

Abstract

We investigate the chemisorptions of oxygen molecules on bilayer graphene (BLG) and its electrically modified charge-doping effect using conductivity measurement of the field effect transistor channeled with BLG. We demonstrate that the change of the Fermi level by manipulating the gate electric field significantly affects not only the rate of molecular adsorption but also the carrier-scattering strength of adsorbed molecules. Exploration of the charge transfer kinetics reveals the electrochemical nature of the oxygen adsorption on BLG. [This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, © American Chemical Society after peer review. To access the final edited and published work see http://dx.doi.org/10.1021/nl202002p.]

10 pages, 6 figures

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• Suppression of contact-induced spin dephasing in graphene/MgO/Co spin-valve devices by successive oxygen treatments
• Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption
• Temperature induced inversion of oxygen response in CVD graphene on SiO2
• Tuning hydrogen adsorption on graphene by gate voltage
• In-situ Raman Spectroscopy of the Graphene / Water Interface of a Solution-Gated Field Effect Transistor: Electron-Phonon Coupling and Spectroelectrochemistry
• Gate-controlled ultraviolet photo-etching of graphene edges
• Gate-controlled photo-oxidation of graphene for electronic structure modification
• Photochemical reaction on graphene surfaces controlled by substrate-surface modification with polar self-assembled monolayers
• Giant Magnetoresistance in Bilayer Graphene Nanoflakes