Gate-controlled photo-oxidation of graphene for electronic structure modification

Abstract

Graphene is an ultrathin material, which allows us to control surface phenomena by means of field-effect gating. Among various surface phenomena, photo-oxidation is known to be a facile method to largely control the electronic structure of graphene. In this study, gate controllability of photo-oxidation of graphene is thoroughly examined using a field-effect-transistor configuration. The presence of water molecules enhances gate controllability, which can be explained using water-oxygen co-adsorption picture. In addition, the photo-oxidation reaction evolves from the edge and proceeds towards the center of the graphene channel, which can be understood by the fringing field effect. Semiconducting characteristics are successfully obtained by narrowing of the graphene channel, suggesting possible formation of a graphene nanoribbon under mild conditions, i.e., in air at room temperature.

Accepted version

References in corpus (12)

• Two Dimensional Atomic Crystals
• Detection of Individual Gas Molecules Absorbed on Graphene
• Energy Band Gap Engineering of Graphene Nanoribbons
• Energy Gaps in Graphene Nanoribbons
• Control of graphene's properties by reversible hydrogenation
• Graphane: a two-dimensional hydrocarbon
• Graphene Nano-Ribbon Electronics
• Fluorographene: Two Dimensional Counterpart of Teflon
• Etching and Narrowing of Graphene from the Edges
• On the mechanism of hydrophilicity of graphene
• Direct Experimental Evidence of Metal-Mediated Etching of Suspended Graphene
• Electrically Controlled Adsorption of Oxygen in Bilayer Graphene Devices

Cited by in corpus (2)

• Tunable Photodetectors via in situ Thermal Conversion of TiS${}_3$ to TiO${}_2$
• Photochemical reaction on graphene surfaces controlled by substrate-surface modification with polar self-assembled monolayers