Temperature dependence of the diffusive conductivity of bilayer graphene
arXiv:0912.1606 · doi:10.1103/PhysRevB.82.075423
Abstract
Assuming diffusive carrier transport and employing an effective medium theory, we calculate the temperature dependence of bilayer graphene conductivity due to Fermi-surface broadening as a function of carrier density. We find that the temperature dependence of the conductivity depends strongly on the amount of disorder. In the regime relevant to most experiments, the conductivity is a function of T/T*, where T* is the characteristic temperature set by disorder. We demonstrate that experimental data taken from various groups collapse onto a theoretically predicted scaling function.
Published version; 6 pages, 5 figures; includes results for the hyperbolic dispersion
References in corpus (25)
- The electronic properties of graphene
- Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
- Suspended Graphene: a bridge to the Dirac point
- Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
- A self-consistent theory for graphene transport
- Temperature dependent transport in suspended graphene
- Quantum-limited shot noise in graphene
- Phase Coherent Transport of Charges in Graphene Quantum Billiard
- Carrier scattering, mobilities and electrostatic potential in mono-, bi- and tri-layer graphenes
- Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering
- Broken symmetry states and divergent resistance in suspended bilayer graphene
- Screening induced temperature dependent transport in 2D graphene
- Shot Noise in Ballistic Graphene
- Ballistic transmission through a graphene bilayer
- Theory of carrier transport in bilayer graphene
- Boltzmann transport and residual conductivity in bilayer graphene
- Theory of charged impurity scattering in two dimensional graphene
- Notes on the minimal longitudinal dc conductivity of perfect bilayer graphene
- Crossover from quantum to Boltzmann transport in graphene
- Effective medium theory for disordered two-dimensional graphene
- Temperature dependence of the conductivity of ballistic graphene
- Mapping the Dirac point in gated bilayer graphene
- Statistics of random voltage fluctuations and the low-density residual conductivity of graphene
- Screening-Induced Transport at Finite Temperature in Bilayer Graphene
- Numerical simulation evidence of spectrum rearrangement in impure graphene
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- Finite Conductivity Minimum in Bilayer Graphene without Charge Inhomogeneities
- Giant magnetoresistance in single layer graphene flakes with a gate voltage tunable weak antilocalization
- Quantum Hall effect on centimeter scale chemical vapor deposited graphene films
- Semiclassical Boltzmann transport theory for graphene multilayers
- Self heating and nonlinear current-voltage characteristics in bilayer graphene
- Tunable terahertz plasmons in graphite thin films
- Electron spin relaxation in bilayer graphene
- Low-temperature linear transport of two-dimensional massive Dirac fermions in silicene: residual conductivity and spin/valley Hall effects
- Electron-electron interactions in non-equilibrium bilayer graphene
- Giant Shear Displacement by Light-Induced Raman Force in Bilayer Graphene
- Graphene resistivity in diffusive limit due to scalar and vector potential electron-phonon scattering
- Electrical conductivity of collapsed multilayer graphene tubes
- Weak localization and universal conductance fluctuations in large area twisted bilayer graphene