Quantum Hall effect on centimeter scale chemical vapor deposited graphene films
arXiv:1109.6829 · doi:10.1063/1.3663972
Abstract
We report observations of well developed half integer quantum Hall effect (QHE) on mono layer graphene films of 7 mm \times 7 mm in size. The graphene films are grown by chemical vapor deposition (CVD) on copper, then transferred to SiO_{2} /Si substrates, with typical carrier mobilities \approx 4000 cm^{2} /Vs. The large size graphene with excellent quality and electronic homogeneity demonstrated in this work is promising for graphene-based quantum Hall resistance standards, and can also facilitate a wide range of experiments on quantum Hall physics of graphene and practical applications exploiting the exceptional properties of graphene.
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Cited by in corpus (13)
- Polycrystalline graphene and other two-dimensional materials
- Scaling Properties of Polycrystalline Graphene: A Review
- Quantum Hall resistance standards from graphene grown by chemical vapor deposition on silicon carbide
- Quantum resistance metrology using graphene
- Quantum Hall effect in polycrystalline graphene: The role of grain boundaries
- Precision quantization of Hall resistance in transferred graphene
- Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils
- Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition
- Scale-invariant large nonlocality in polycrystalline graphene
- Cooling of chiral heat transport in the quantum Hall effect graphene
- Destroyed quantum Hall effect in graphene with [0001] tilt grain boundaries
- Suppressed compressibility of quantum Hall effect edge states in epitaxial graphene on SiC
- Graphene surpasses GaAs/AlGaAs for the application of the quantum Hall effect in metrology