184 citations · 560 across the 14 of their papers we have counts for
14 papers
Asymmetrical contact scaling and measurements in MoS2 FETs
Zhihui Cheng, Jonathan Backman, Huairuo Zhang +8
Two-dimensional (2D) materials have great potential for use in future electronics due to their atomically thin nature which withstands short channel effects and thus enables better…
How to Report and Benchmark Emerging Field-Effect Transistors
Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang +13
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device per…
Geometric interference in a high-mobility graphene annulus p-n junction device
Son T. Le, Albert F. Rigosi, Joseph A. Hagmann +3
The emergence of interference is observed in the resistance of a graphene annulus pn junction device as a result of applying two separate gate voltages. The observed resistance pat…
Rapid, Quantitative Therapeutic Screening for Alzheimer's Enzymes Enabled by Optimal Signal Transduction with Transistors
Son T. Le, Michelle A. Morris, Antonio Cardone +6
We show that simple, commercially sourced n-channel silicon field-effect transistors (nFETs) operating under closed loop control exhibit an ~3-fold improvement in pH readout resolu…
Strong equilibration of Landau levels edge-states at the graphene edge
Son T. Le, Joseph A. Hagmann, Nikolai Klimov +4
We present the results of an experimental study of the interaction of quantized Landau level (LL) edge-states at the physical edge of graphene by using a graphene pn junction devic…
Reproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing
Nicholas B. Guros, Son T. Le, Siyuan Zhang +4
Metal-mediated exfoliation has been demonstrated as a promising approach for obtaining large-area flakes of 2D materials to fabricate prototypical nanoelectronics. However, several…