27 citations · 29 across the 4 of their papers we have counts for
3 papers · 1 filter
Asymmetrical contact scaling and measurements in MoS2 FETs
Zhihui Cheng, Jonathan Backman, Huairuo Zhang +8
Two-dimensional (2D) materials have great potential for use in future electronics due to their atomically thin nature which withstands short channel effects and thus enables better…
Reproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing
Nicholas B. Guros, Son T. Le, Siyuan Zhang +4
Metal-mediated exfoliation has been demonstrated as a promising approach for obtaining large-area flakes of 2D materials to fabricate prototypical nanoelectronics. However, several…
Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers
Xiqiao Wang, Joseph A. Hagmann, Pradeep Namboodiri +8
Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth enable patterning of highly phosphorus-doped silicon (Si:P) monolayers (ML) with atomic precision.…