activity
20082014
most citedTop-gated graphene field-effect-transistors formed by decomposition of SiC

222 citations · 709 across the 9 of their papers we have counts for

collaborators

9 papers

cond-mat.mes-hall2014★ 68 cited

Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states

Jifa Tian, Isaac Childres, Helin Cao +3

Spin-momentum helical locking is one of the most important properties of the nontrivial topological surface states (TSS) in 3D topological insulators (TI). It underlies the iconic…

cond-mat.mtrl-sci2013★ 36 cited

Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

Ting Fung Chung, Tian Shen, Helin Cao +5

The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interests. Initial studies using mechanically exfoliated graphene unveiled its re…

cond-mat.mtrl-sci2012★ 119 cited

UV/Ozone treatment to reduce metal-graphene contact resistance

Wei Li, Yiran Liang, Dangmin Yu +10

We report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone (UVO) treatment to modify the metal/graphene contact interface. The devices were fa…

cond-mat.mes-hall2011★ 15 cited

Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)

Tian Shen, Adam T. Neal, Michael L. Bolen +4

We investigate the low-temperature magneto-transport properties of monolayer epitaxial graphene films formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperatu…

cond-mat.mes-hall2011★ 38 cited

Quantum Hall effect on centimeter scale chemical vapor deposited graphene films

Tian Shen, Wei Wu, Qingkai Yu +4

We report observations of well developed half integer quantum Hall effect (QHE) on mono layer graphene films of 7 mm \times 7 mm in size. The graphene films are grown by chemical v…

cond-mat.str-el2011

Observation of Quantized Hall Effect and Shubnikov-de Hass Oscillations in Highly Doped Bi2Se3: Evidence for Layered Transport of Bulk Carriers

Helin Cao, Jifa Tian, Ireneusz Miotkowski +4

Bi2Se3 is an important semiconductor thermoelectric material and a prototype topological insulator. Here we report observation of Shubnikov-de Hass (SdH) oscillations accompanied b…