222 citations · 709 across the 9 of their papers we have counts for
6 papers · 1 filter
Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states
Jifa Tian, Isaac Childres, Helin Cao +3
Spin-momentum helical locking is one of the most important properties of the nontrivial topological surface states (TSS) in 3D topological insulators (TI). It underlies the iconic…
Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)
Tian Shen, Adam T. Neal, Michael L. Bolen +4
We investigate the low-temperature magneto-transport properties of monolayer epitaxial graphene films formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperatu…
Quantum Hall effect on centimeter scale chemical vapor deposited graphene films
Tian Shen, Wei Wu, Qingkai Yu +4
We report observations of well developed half integer quantum Hall effect (QHE) on mono layer graphene films of 7 mm \times 7 mm in size. The graphene films are grown by chemical v…
Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)
T. Shen, J. J. Gu, M. Xu +5
Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is rea…
Magneto-conductance Oscillations in Graphene Antidot Arrays
T. Shen, Y. Q. Wu, M. A. Capano +3
Epitaxial graphene films have been formed on the C-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. Nano-scale square antidot arrays have been f…
Top-gated graphene field-effect-transistors formed by decomposition of SiC
Y. Q. Wu, P. D. Ye, M. A. Capano +4
Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 i…