activity
20032013
most citedA quantum logic gate between a solid-state quantum bit and a photon

179 citations · 267 across the 7 of their papers we have counts for

collaborators

7 papers

quant-ph2013★ 45 cited

Resonant interactions between a Mollow triplet sideband of a quantum dot and a strongly coupled cavity

Hyochul Kim, Thomas C. Shen, Kaushik Roy-Choudhury +2

We experimentally demonstrate that the Mollow triplet sidebands of a quantum dot strongly coupled to a cavity exhibit anomalous power induced broadening and enhanced emission when…

quant-ph2013★ 179 cited

A quantum logic gate between a solid-state quantum bit and a photon

Hyochul Kim, Ranojoy Bose, Thomas C. Shen +2

Integrated quantum photonics provides a promising route towards scalable solid-state implementations of quantum networks, quantum computers, and ultra-low power opto-electronic dev…

quant-ph2011

Strong coupling between quantum dot exciton spin states and a photonic crystal cavity

Hyochul Kim, Thomas C. Shen, Deepak Sridharan +2

We apply magnetic fields of up to 7 T to an indium arsenide (InAs) quantum dot (QD) strongly coupled to a photonic crystal cavity. The field lifts the degeneracy of QD exciton spin…

cond-mat.mtrl-sci2003★ 17 cited

Low temperature silicon epitaxy on hydrogen terminated Si(100) surfaces

Jeong-Young Ji, T. -C. Shen

Si deposition on H terminated Si(100)-2x1 and 3x1 surfaces at temperatures 300-530 K is studied by scanning tunneling microscopy. Hydrogen apparently hinders Si adatom diffusion an…

cond-mat.mtrl-sci2003★ 4 cited

The role of antiphase boundaries during ion sputtering and solid phase epitaxy of Si(001)

J. C. Kim, J. -Y. Ji, J. S. Kline +2

The Si(001) surface morphology during ion sputtering at elevated temperatures and solid phase epitaxy following ion sputtering at room temperature has been investigated using scann…

cond-mat.mtrl-sci2003★ 20 cited

Preparation of atomically clean and flat Si(100) surfaces by low-energy ion sputtering and low-temperature annealing

J. C. Kim, J. -Y. Ji, J. S. Kline +2

Si(100) surfaces were prepared by wet-chemical etching followed by 0.3-1.5keV Ar ion sputtering, either at elevated or room temperature. After a brief anneal under ultrahigh vacuum…