Synthetic Graphene Grown by Chemical Vapor Deposition on Copper Foils

Abstract

The discovery of graphene, a single layer of covalently bonded carbon atoms, has attracted intense interests. Initial studies using mechanically exfoliated graphene unveiled its remarkable electronic, mechanical and thermal properties. There has been a growing need and rapid development in large-area deposition of graphene film and its applications. Chemical vapour deposition on copper has emerged as one of the most promising methods in obtaining large-scale graphene films with quality comparable to exfoliated graphene. In this chapter, we review the synthesis and characterizations of graphene grown on copper foil substrates by atmospheric pressure chemical vapour deposition. We also discuss potential applications of such large scale synthetic graphene.

23 pages, 4 figures

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• Experimental Observation of Two Massless Dirac-Fermion Gases in Graphene-Topological Insulator Heterostructure
• Nucleation and growth of HfO${}_2$ layers on graphene by CVD
• Electrical spin injection into graphene from a topological insulator in a van der Waals heterostructure