Giant Shear Displacement by Light-Induced Raman Force in Bilayer Graphene

Abstract

Coherent excitation of shear phonons in van der Waals layered materials is a non-destructive mechanism to fine-tune the electronic state of the system. We develop a diagrammatic theory for the displacive Raman force and apply it to the shear phonon's dynamics. We obtain a rectified Raman force density in bilayer graphene of the order of $\mathcal{F}\sim 10nN/n{\mathrm{m}}^2$ leading to a giant shear displacement $Q_0\sim 50$pm for an intense infrared laser. We discuss both circular and linear displacive Raman forces. We show that the laser frequency and polarization can effectively tune $Q_0$ in different electronic doping, temperature, and scattering rates. We reveal that the finite $Q_0$ induces a Dirac crossing pair in the low-energy dispersion that photoemission spectroscopy can probe. Our finding provides a systematic pathway to simulate and analyze the coherent manipulation of staking order in the heterostructures of layered materials by laser irradiation.

arXiv comment6 Pages, 3 Figures, Supplementary: As ancillary file

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Cited by in corpus (1)

• Light-induced shear phonon splitting and instability in bilayer graphene