Mapping the Dirac point in gated bilayer graphene
arXiv:0910.3720 · doi:10.1063/1.3275755
Abstract
We have performed low temperature scanning tunneling spectroscopy measurements on exfoliated bilayer graphene on SiO2. By varying the back gate voltage we observed a linear shift of the Dirac point and an opening of a band gap due to the perpendicular electric field. In addition to observing a shift in the Dirac point, we also measured its spatial dependence using spatially resolved scanning tunneling spectroscopy. The spatial variation of the Dirac point was not correlated with topographic features and therefore we attribute its shift to random charged impurities.
3 pages, 3 figures
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- The compressibility of graphene
- Dynamic Bandstructure and Capacitance Effects in Scanning Tunneling Spectroscopy of Bilayer Graphene
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- Potential fluctuations in graphene due to correlated charged impurities in substrate
- Inhomogeneity and nonlinear screening in gapped bilayer graphene
- Electron-electron interactions in non-equilibrium bilayer graphene
- Continuous-distribution puddle model for conduction in trilayer graphene
- Scaling properties of mono-layer graphene away from the Dirac point
- Scanning Tunneling Microscopy and Spectroscopy study of charge inhomogeneities in bilayer Graphene