Band Structure Mapping of Bilayer Graphene via Quasiparticle Scattering

Abstract

A perpendicular electric field breaks the layer symmetry of Bernal-stacked bilayer graphene, resulting in the opening of a band gap and a modification of the effective mass of the charge carriers. Using scanning tunneling microscopy and spectroscopy, we examine standing waves in the local density of states of bilayer graphene formed by scattering from a bilayer/trilayer boundary. The quasiparticle interference properties are controlled by the bilayer graphene band structure, allowing a direct local probe of the evolution of the band structure of bilayer graphene as a function of electric field. We extract the Slonczewski-Weiss-McClure model tight binding parameters as ${\gamma }_0=3.1$ eV, ${\gamma }_1=0.39$ eV, and ${\gamma }_4=0.22$ eV.

12 pages, 4 figures

References in corpus (10)

• The electronic properties of graphene
• Boron nitride substrates for high-quality graphene electronics
• Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride
• The electronic properties of bilayer graphene
• Band Structure of ABC-Stacked Graphene Trilayers
• Probing the Electronic Structure of Bilayer Graphene by Raman Scattering
• Determination of the electronic structure of bilayer graphene from infrared spectroscopy results
• Infrared spectroscopy of electronic bands in bilayer graphene
• Quasiparticle Chirality in Epitaxial Graphene Probed at the Nanometer Scale
• Role of pseudospin in quasiparticle interferences in epitaxial graphene probed by high-resolution scanning tunneling microscopy

Cited by in corpus (8)

• Universal moiré nematic phase in twisted graphitic systems
• Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene
• Direct Visualization of Native Defects in Graphite and Their Effect on the Electronic Properties of Bernal-Stacked Bilayer Graphene
• Nanospot Angle-Resolved Photoemission Study of Bernal-Stacked Bilayer Graphene on Hexagonal Boron Nitride: Band Structure and Local Variation of Lattice Alignment
• Phase diagram of a graphene bilayer in the zero-energy Landau level
• Dynamic Bandstructure and Capacitance Effects in Scanning Tunneling Spectroscopy of Bilayer Graphene
• Local characterization and engineering of proximitized correlated states in graphene-NbSe${}_2$ vertical heterostructures
• Electronic and Spin-Orbit Properties of hBN Encapsulated Bilayer Graphene