Nanospot Angle-Resolved Photoemission Study of Bernal-Stacked Bilayer Graphene on Hexagonal Boron Nitride: Band Structure and Local Variation of Lattice Alignment

Abstract

Hexagonal boron nitride (hBN) is the supporting substrate of choice for two-dimensional material devices because it is atomically flat and chemically inert. However, due to the small size of mechanically exfoliated hBN flakes, electronic structure studies of 2D materials supported by hBN using angle-resolved photoemission spectroscopy (ARPES) are challenging. Here we investigate the electronic band structure of a Bernal-stacked bilayer graphene sheet on a hexagonal boron nitride (BLG/hBN) flake using nanospot ARPES (nanoARPES). By fitting high-resolution energy vs. momentum electronic band spectra, we extract the tight-binding parameters for BLG on hBN. In addition, we reveal spatial variations of the alignment angle between BLG and hBN lattices via inhomogeneity of the electronic bands near the Fermi level. We confirmed these findings by scanning tunneling microscopy measurements obtained on the same device. Our results from spatially resolved nanoARPES measurements of BLG/hBN heterostructures are instrumental for understanding experiments that utilize spatially averaging techniques such as electronic transport and optical spectroscopy.

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Cited by in corpus (11)

• Observation of Electrically Tunable van Hove Singularities in Twisted Bilayer Graphene from nanoARPES
• An accurate tight binding model for twisted bilayer graphene describes topological flat bands without geometric relaxation
• Determination of the trigonal warping orientation in Bernal-stacked bilayer graphene via scanning tunneling microscopy
• Accessing the spectral function of in operando devices by angle-resolved photoemission spectroscopy
• Valley-polarization in biased bilayer graphene using circularly polarized light
• Direct Visualization of Native Defects in Graphite and Their Effect on the Electronic Properties of Bernal-Stacked Bilayer Graphene
• Accessing the spectral function in a current-carrying device
• Theory of ARPES in Graphene-Based Moiré Superlattices
• Valley polarization, magnetization, and superconductivity in bilayer graphene near the van Hove singularity
• Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride
• Switching spin filling sequence in a bilayer graphene quantum dot through trigonal warping