Nanospot Angle-Resolved Photoemission Study of Bernal-Stacked Bilayer Graphene on Hexagonal Boron Nitride: Band Structure and Local Variation of Lattice Alignment

Abstract

Hexagonal boron nitride (hBN) is the supporting substrate of choice for two-dimensional material devices because it is atomically flat and chemically inert. However, due to the small size of mechanically exfoliated hBN flakes, electronic structure studies of 2D materials supported by hBN using angle-resolved photoemission spectroscopy (ARPES) are challenging. Here we investigate the electronic band structure of a Bernal-stacked bilayer graphene sheet on a hexagonal boron nitride (BLG/hBN) flake using nanospot ARPES (nanoARPES). By fitting high-resolution energy vs. momentum electronic band spectra, we extract the tight-binding parameters for BLG on hBN. In addition, we reveal spatial variations of the alignment angle between BLG and hBN lattices via inhomogeneity of the electronic bands near the Fermi level. We confirmed these findings by scanning tunneling microscopy measurements obtained on the same device. Our results from spatially resolved nanoARPES measurements of BLG/hBN heterostructures are instrumental for understanding experiments that utilize spatially averaging techniques such as electronic transport and optical spectroscopy.

References in corpus (10)

• The electronic properties of bilayer graphene
• Probing the Electronic Structure of Bilayer Graphene by Raman Scattering
• Determination of the electronic structure of bilayer graphene from infrared spectroscopy results
• Cyclotron resonance in bilayer graphene
• Observation of Anomalous Phonon Softening in Bilayer Graphene
• Even denominator fractional quantum Hall state in bilayer graphene
• Characterization of graphene through anisotropy of constant-energy maps in angle-resolved photoemission
• Role of pseudospin in quasiparticle interferences in epitaxial graphene probed by high-resolution scanning tunneling microscopy
• Band Structure Mapping of Bilayer Graphene via Quasiparticle Scattering
• Electronic structure of transferred graphene/h-BN van der Waals heterostructures with nonzero stacking angles by nano-ARPES

Cited by in corpus (7)

• An accurate tight binding model for twisted bilayer graphene describes topological flat bands without geometric relaxation
• Accessing the spectral function of in operando devices by angle-resolved photoemission spectroscopy
• Valley-polarization in biased bilayer graphene using circularly polarized light
• Direct Visualization of Native Defects in Graphite and Their Effect on the Electronic Properties of Bernal-Stacked Bilayer Graphene
• Switching spin filling sequence in a bilayer graphene quantum dot through trigonal warping
• Valley polarization, magnetization, and superconductivity in bilayer graphene near the van Hove singularity
• Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride