Electronic structure of transferred graphene/h-BN van der Waals heterostructures with nonzero stacking angles by nano-ARPES
arXiv:1701.09013 · doi:10.1088/0953-8984/28/44/444002
Abstract
In van der Waals heterostructures, the periodic potential from the Moiré superlattice can be used as a control knob to modulate the electronic structure of the constituent materials. Here we present a nanoscale angle-resolved photoemission spectroscopy (Nano-ARPES) study of transferred graphene/h-BN heterostructures with two different stacking angles of 2.4° and 4.3° respectively. Our measurements reveal six replicas of graphene Dirac cones at the superlattice Brillouin zone (SBZ) centers. The size of the SBZ and its relative rotation angle to the graphene BZ are in good agreement with Moiré superlattice period extracted from atomic force microscopy (AFM) measurements. Comparison to epitaxial graphene/h-BN with 0° stacking angles suggests that the interaction between graphene and h-BN decreases with increasing stacking angle.
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Cited by in corpus (7)
- Angle-resolved photoemission spectroscopy and its application to topological materials
- Excess resistivity in graphene superlattices caused by umklapp electron-electron scattering
- Emergence of Frohlich polaron from interlayer electron-phonon coupling in van der Waals heterostructure
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- Progress on band structure engineering of twisted bilayer and two-dimensional moiré heterostructures