352 citations · 2k across the 34 of their papers we have counts for
34 papers
Individual Vanadium Dopants Form Deep In-Gap States in Monolayer WS2
Tianhui Zhu, Carlos A. Gonzalez, Shihao Tu +11
Point defects in atomically thin materials have a strong impact on physical properties and those that induce in-gap states are advantageous for quantum information science and engi…
Observation of Giant Orbital Magnetic Moments and Paramagnetic Shift in Artificial Relativistic Atoms and Molecules
Zhehao Ge, Sergey Slizovskiy, Peter Polizogopoulos +6
Massless Dirac fermions have been observed in various materials such as graphene and topological insulators in recent years, thus offering a solid-state platform to study relativis…
Imaging Quantum Interference in Stadium-Shaped Monolayer and Bilayer Graphene Quantum Dots
Zhehao Ge, Dillon Wong, Juwon Lee +10
Experimental realization of graphene-based stadium-shaped quantum dots (QDs) have been few and incompatible with scanned probe microscopy. Yet, direct visualization of electronic s…
Denoising Scanning Tunneling Microscopy Images of Graphene with Supervised Machine Learning
Frédéric Joucken, John L. Davenport, Zhehao Ge +6
Machine learning (ML) methods are extraordinarily successful at denoising photographic images. The application of such denoising methods to scientific images is, however, often com…
Ultra-sharp lateral junctions in modulation-doped graphene
Jesse Balgley, Jackson Butler, Sananda Biswas +9
We demonstrate ultra-sharp () lateral junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles c…
Quasiparticle interference patterns in bilayer graphene with trigonal warping
Vardan Kaladzhyan, Frédéric Joucken, Zhehao Ge +5
We calculate the form of quasiparticle interference patterns in bilayer graphene within a low-energy description, taking into account perturbatively the trigonal warping terms. We…
Surface states and quasiparticle interference in Bernal and rhombohedral graphite with and without trigonal warping
Vardan Kaladzhyan, Sarah Pinon, Frédéric Joucken +6
We use an exact analytical technique [Phys. Rev. B \textbf{101}, 115405 (2020), Phys. Rev. B \textbf{102}, 165117 (2020)] to recover the surface Green's functions for Bernal (ABA)…
Sublattice dependence and gate-tunability of midgap and resonant states induced by native dopants in Bernal-stacked bilayer graphene
Frédéric Joucken, Cristina Bena, Zhehao Ge +5
The properties of semiconductors can be crucially impacted by midgap states induced by dopants, which can be native or intentionally incorporated in the crystal lattice. For Bernal…
Direct Visualization of Native Defects in Graphite and Their Effect on the Electronic Properties of Bernal-Stacked Bilayer Graphene
Frederic Joucken, Cristina Bena, Zhehao Ge +7
Graphite crystals used to prepare graphene-based heterostructures are generally assumed to be defect free. We report here scanning tunneling microscopy results that show graphite c…
Control of Giant Topological Magnetic Moment and Valley Splitting in Trilayer Graphene
Zhehao Ge, Sergey Slizovskiy, Fredric Joucken +5
Bloch states of electrons in honeycomb two-dimensional crystals with multi-valley band structure and broken inversion symmetry have orbital magnetic moments of a topological nature…
Visualization and Manipulation of Bilayer Graphene Quantum Dots with Broken Rotational Symmetry and Nontrivial Topology
Zhehao Ge, Frederic Joucken, Eberth Quezada +8
Electrostatically defined quantum dots (QDs) in Bernal stacked bilayer graphene (BLG) are a promising quantum information platform because of their long spin decoherence times, hig…
Gate Tunable Magnetism and Giant Magnetoresistance in ABC-stacked Few-Layer Graphene
Yongjin Lee, Shi Che, Jairo Velasco +6
Magnetism is a prototypical phenomenon of quantum collective state, and has found ubiquitous applications in semiconductor technologies such as dynamic random access memory (DRAM).…
Determination of the trigonal warping orientation in Bernal-stacked bilayer graphene via scanning tunneling microscopy
Frédéric Joucken, Zhehao Ge, Eberth A. Quezada-López +4
The existence of strong trigonal warping around the K point for the low energy electronic states in multilayer (N2) graphene films and graphite is well established. It is res…
Probing the Electronic Structure of Graphene Near and Far from the Fermi Level via Planar Tunneling Spectroscopy
John L. Davenport, Zhehao Ge, Junyan Liu +12
Scanning tunneling spectroscopy (STS) has yielded significant insight on the electronic structure of graphene and other two-dimensional (2D) materials. STS directly measures a fund…
Nanospot Angle-Resolved Photoemission Study of Bernal-Stacked Bilayer Graphene on Hexagonal Boron Nitride: Band Structure and Local Variation of Lattice Alignment
Frédéric Joucken, Eberth A. Quezada-López, Jose Avila +7
Hexagonal boron nitride (hBN) is the supporting substrate of choice for two-dimensional material devices because it is atomically flat and chemically inert. However, due to the sma…
Visualizing the Effect of an Electrostatic Gate with Angle-Resolved Photoemission Spectroscopy
Frédéric Joucken, Jose Avila, Zhehao Ge +9
Electrostatic gating is pervasive in materials science, yet its effects on the electronic band structure of materials has never been revealed directly by angle-resolved photoemissi…
Visualization and Control of Single Electron Charging in Bilayer Graphene Quantum Dots
Jairo Velasco, Juwon Lee, Dillon Wong +9
Graphene p-n junctions provide an ideal platform for investigating novel behavior at the boundary between electronics and optics that arise from massless Dirac fermions, such as wh…
Imaging electrostatically confined Dirac fermions in graphene quantum dots
Juwon Lee, Dillon Wong, Jairo Velasco +9
Electrostatic confinement of charge carriers in graphene is governed by Klein tunneling, a relativistic quantum process in which particle-hole transmutation leads to unusual anisot…
Nanoscale control of rewriteable doping patterns in pristine graphene/boron nitride heterostructures
Jairo Velasco, Long Ju, Dillon Wong +11
Nanoscale control of charge doping in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and t…
Direct growth of single- and few-layer MoS2 on h-BN with preferred relative rotation angles
Aiming Yan, Jairo Velasco, Salman Kahn +5
Monolayer molybdenum disulphide (MoS2) is a promising two-dimensional direct-bandgap semiconductor with potential applications in atomically thin and flexible electronics. An attra…
Characterization and manipulation of individual defects in insulating hexagonal boron nitride using scanning tunneling microscopy
Dillon Wong, Jairo Velasco, Long Ju +9
Defects play a key role in determining the properties of most materials and, because they tend to be highly localized, characterizing them at the single-defect level is particularl…
Distinct Competing Ordered ν=2 States in Bilayer Graphene
J. Velasco, Y. Lee, Fan Zhang +6
Because of its large density-of-states and the 2π Berry phase near its low-energy band-contact points, neutral bilayer graphene (BLG) at zero magnetic field (B) is susceptible to c…
Giant Interaction-Induced Gap and Electronic Phases in Rhombohedral Trilayer Graphene
Y. Lee, D. Tran, K. Myhro +7
Due to their unique electron dispersion and lack of a Fermi surface, Coulomb interactions in undoped two-dimensional Dirac systems, such as single, bi- and tri-layer graphene, can…
Photo-induced Doping in Graphene/Boron Nitride Heterostructures
L. Ju, J. Velasco, E. Huang +11
The design of stacks of layered materials in which adjacent layers interact by van der Waals forces[1] has enabled the combination of various two-dimensional crystals with differen…