352 citations · 2k across the 34 of their papers we have counts for
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Gate Tunable Magnetism and Giant Magnetoresistance in ABC-stacked Few-Layer Graphene
Yongjin Lee, Shi Che, Jairo Velasco +6
Magnetism is a prototypical phenomenon of quantum collective state, and has found ubiquitous applications in semiconductor technologies such as dynamic random access memory (DRAM).…
Determination of the trigonal warping orientation in Bernal-stacked bilayer graphene via scanning tunneling microscopy
Frédéric Joucken, Zhehao Ge, Eberth A. Quezada-López +4
The existence of strong trigonal warping around the K point for the low energy electronic states in multilayer (N2) graphene films and graphite is well established. It is res…
Probing the Electronic Structure of Graphene Near and Far from the Fermi Level via Planar Tunneling Spectroscopy
John L. Davenport, Zhehao Ge, Junyan Liu +12
Scanning tunneling spectroscopy (STS) has yielded significant insight on the electronic structure of graphene and other two-dimensional (2D) materials. STS directly measures a fund…
Nanospot Angle-Resolved Photoemission Study of Bernal-Stacked Bilayer Graphene on Hexagonal Boron Nitride: Band Structure and Local Variation of Lattice Alignment
Frédéric Joucken, Eberth A. Quezada-López, Jose Avila +7
Hexagonal boron nitride (hBN) is the supporting substrate of choice for two-dimensional material devices because it is atomically flat and chemically inert. However, due to the sma…
Visualizing the Effect of an Electrostatic Gate with Angle-Resolved Photoemission Spectroscopy
Frédéric Joucken, Jose Avila, Zhehao Ge +9
Electrostatic gating is pervasive in materials science, yet its effects on the electronic band structure of materials has never been revealed directly by angle-resolved photoemissi…