Visualizing the Effect of an Electrostatic Gate with Angle-Resolved Photoemission Spectroscopy

Abstract

Electrostatic gating is pervasive in materials science, yet its effects on the electronic band structure of materials has never been revealed directly by angle-resolved photoemission spectroscopy (ARPES), the technique of choice to non-invasively probe the electronic band structure of a material. By means of a state-of-the-art ARPES setup with sub-micron spatial resolution, we have investigated a heterostructure composed of Bernal-stacked bilayer graphene (BLG) on hexagonal boron nitride and deposited on a graphite flake. By voltage biasing the latter, the electric field effect is directly visualized on the valence band as well as on the carbon 1s core level of BLG. The band gap opening of BLG submitted to a transverse electric field is discussed and the importance of intralayer screening is put forward. Our results pave the way for new studies that will use momentum-resolved electronic structure information to gain insight on the physics of materials submitted to the electric field effect.

References in corpus (18)

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• Ab-initio study of gap opening and screening effects in gated bilayer graphene
• Characterization of graphene through anisotropy of constant-energy maps in angle-resolved photoemission
• Emergence of Frohlich polaron from interlayer electron-phonon coupling in van der Waals heterostructure
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Cited by in corpus (16)

• Visualization of the flat electronic band in twisted bilayer graphene near the magic angle twist
• Observation of Electrically Tunable van Hove Singularities in Twisted Bilayer Graphene from nanoARPES
• Determination of the trigonal warping orientation in Bernal-stacked bilayer graphene via scanning tunneling microscopy
• Accessing the spectral function of in operando devices by angle-resolved photoemission spectroscopy
• Momentum-resolved view of highly tunable many-body effects in a graphene/hBN field-effect device
• Correlation-Driven Electron-Hole Asymmetry in Graphene Field Effect Devices
• Direct visualization of the charge transfer in Graphene/$\alpha$-RuCl${}_3$ heterostructure
• ARPES signatures of few-layer twistronic graphenes
• Full control of solid-state electrolytes for electrostatic gating
• Angle-resolved photoemission spectroscopy with an $\text{in situ}$ tunable magnetic field
• Observation of dichotomic field-tunable electronic structure in twisted monolayer-bilayer graphene
• Revealing flat bands and hybridization gaps in a twisted bilayer graphene device with microARPES
• Theory of ARPES in Graphene-Based Moiré Superlattices
• Momentum-space imaging of ultra-thin electron liquids in delta-doped silicon
• Autonomous microARPES
• Electronic structure of 2D van der Waals crystals and heterostructures investigated by spatially- and angle-resolved photoemission