Ultra-sharp lateral $p\text{-}n$ junctions in modulation-doped graphene

Abstract

We demonstrate ultra-sharp ($\lesssim 10\text{ nm}$) lateral $p\text{-}n$ junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The $p\text{-}n$ junction lies at the boundary between differentially-doped regions of a graphene sheet, where one side is intrinsic and the other is charge-doped by proximity to a flake of $\alpha$-RuCl${}_3$ across a thin insulating barrier. We extract the $p\text{-}n$ junction contribution to the device resistance to place bounds on the junction width. We achieve an ultra-sharp junction when the boundary between the intrinsic and doped regions is defined by a cleaved crystalline edge of $\alpha$-RuCl${}_3$ located 2 nm from the graphene. Scanning tunneling spectroscopy in heterostructures of graphene, hexagonal boron nitride, and $\alpha$-RuCl${}_3$ shows potential variations on a sub-10 nm length scale. First principles calculations reveal the charge-doping of graphene decays sharply over just nanometers from the edge of the $\alpha$-RuCl${}_3$ flake.

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• Nanoscale ferroelectric programming of van der Waals heterostructures
• Exfoliation and Optical Properties of S=1 Triangular Lattice Antiferromagnet NiGa${}_2$S${}_4$
• Spin-dependent edge states in two-dimensional Dirac materials with a flat band
• Ferroelectric switching of interfacial dipoles in $\alpha$-RuCl${}_3$/graphene heterostructure
• Evanescent-mode-assisted Klein tunneling in dual-gated bilayer graphene
• Revealing the impact of ambient molecular contamination on scanning tunneling microscopy and spectroscopy of layered materials
• Coupling of Klein-Andreev Resonant States in Bi${}_2$Sr${}_2$CaCu${}_2$O${}_{8+x}$-graphene-Bi${}_2$Sr${}_2$CaCu${}_2$O${}_{8+x}$ Devices