30 citations · 74 across the 7 of their papers we have counts for
8 papers
Nanoscale Mapping of Strain-engineered Excitons in Monolayer WSe
Anna S. Roche, Nicholas V. Proscia, Paul D. Cunningham +12
Excitons in monolayer transition metal dichalcogenides (TMDs) are highly sensitive to external stimuli, allowing control of resonance energies and lifetimes through electric and ma…
Transport Enhancement and In Situ Control of Electronic Correlation via Photoinduced Modulation Doping of van der Waals Heterostructures
Collin R. Sanborn, Son T. Le, Thuc T. Mai +7
Modulation doping, a well-established technique for traditional semiconductor heterostructures, is a promising approach for tailoring carrier concentration in 2D materials devices.…
Direct-Write Printed Contacts to Layered and 2D Materials
Sharadh Jois, Erica Lee, Philip Li +10
Advancements in fabrication methods have shaped new computing device technologies. Among these methods, depositing electrical contacts to the channel material is fundamental to dev…
High-speed metamagnetic resistive switching of FeRh through Joule heating
Nicholas A. Blumenschein, Gregory M. Stephen, Cory D. Cress +4
Due to its proximity to room temperature and demonstrated high degree of temperature tunability, the metamagnetic ordering transition in FeRh is attractive for novel high-performan…
Ultra-sharp lateral junctions in modulation-doped graphene
Jesse Balgley, Jackson Butler, Sananda Biswas +9
We demonstrate ultra-sharp () lateral junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles c…
Super-ideal diodes at the Schottky-Mott limit in gated graphene-WSe heterojunctions
Samuel W. LaGasse, Prathamesh Dhakras, Takashi Taniguchi +2
Metal-semiconductor interfaces, known as Schottky junctions, have long been hindered by defects and impurities. Such imperfections dominate the electrical characteristics of the ju…
Understanding magnetic focusing in graphene - junctions through quantum modeling
Samuel W LaGasse, Ji Ung Lee
We present a quantum model which provides enhanced understanding of recent transverse magnetic focusing experiments on graphene - junctions. Spatially resolved flow maps of l…
Theory of Landau level mixing in heavily graded graphene p-n junctions
Samuel W LaGasse, Ji Ung Lee
We demonstrate the use of a quantum transport model to study heavily graded graphene p-n junctions in the quantum Hall regime. A combination of p-n interface roughness and delta fu…