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Samuel W. LaGasse

2 papers here

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • first author1
  • middle author1

Across the 2 of 2 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall2
same name
  • Samuel W. LaGasse — 1 paper

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

most citedUltra-sharp lateral p-n junctions in modulation-doped graphene

30 citations · 30 across the 1 of their papers we have counts for

collaborators

2 papers

cond-mat.mes-hall2022★ 30 cited

Ultra-sharp lateral p-n junctions in modulation-doped graphene

Jesse Balgley, Jackson Butler, Sananda Biswas +9

We demonstrate ultra-sharp (≲10 nm) lateral p-n junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles c…

cond-mat.mes-hall2018

Super-ideal diodes at the Schottky-Mott limit in gated graphene-WSe2​ heterojunctions

Samuel W. LaGasse, Prathamesh Dhakras, Takashi Taniguchi +2

Metal-semiconductor interfaces, known as Schottky junctions, have long been hindered by defects and impurities. Such imperfections dominate the electrical characteristics of the ju…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.