Theory of Landau level mixing in heavily graded graphene p-n junctions

Abstract

We demonstrate the use of a quantum transport model to study heavily graded graphene p-n junctions in the quantum Hall regime. A combination of p-n interface roughness and delta function disorder potential allows us to compare experimental results on different devices from the literature. We find that wide p-n junctions suppress mixing of $n\ne 0$ Landau levels. Our simulations spatially resolve carrier transport in the device, for the first time, revealing separation of higher order Landau levels in strongly graded junctions, which suppresses mixing.

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• Graphene $n$-$p$ junctions in the Quantum Hall regime: numerical study of incoherent scattering effects
• Interplay of filling fraction and coherence in symmetry broken graphene p-n junction
• Geometric interference in a high-mobility graphene annulus p-n junction device
• Strong equilibration of Landau levels edge-states at the graphene edge
• Quantum Hall Transport Measurements of Lateral p-n Junctions Formed via Precise Spatial Photodoping of Graphene/hBN Heterostructures
• Quantum transport in graphene Hall bars: Effects of side gates