Manipulating quantum Hall edge channels in graphene through Scanning Gate Microscopy
arXiv:1707.02855 · doi:10.1103/PhysRevB.96.195423
Abstract
We show evidence of the backscattering of quantum Hall edge channels in a narrow graphene Hall bar, induced by the gating effect of the conducting tip of a Scanning Gate Microscope, which we can position with nanometer precision. We show full control over the edge channels and are able, due to the spatial variation of the tip potential, to separate co-propagating edge channels in the Hall bar, creating junctions between regions of different charge carrier density, that have not been observed in devices based on top- or split-gates. The solution of the corresponding quantum scattering problem is presented to substantiate these results, and possible follow-up experiments are discussed.
arXiv comment10 pages, 12 figures
References in corpus (29)
- The electronic properties of graphene
- The Raman Fingerprint of Graphene
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Energy Band Gap Engineering of Graphene Nanoribbons
- Electronic transport in two dimensional graphene
- Room-Temperature Quantum Hall Effect in Graphene
- Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
- Making graphene visible
- Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
- Evidence of the role of contacts on the observed electron-hole asymmetry in graphene
- Sharp and Smooth Boundaries of Quantum Hall Liquids
- Quantized Transport in Graphene p-n Junctions in Magnetic Field
- Electronic Doping and Scattering by Transition Metals on Graphene
- Scalable Tight-Binding Model for Graphene
- Mach-Zehnder interferometry using spin- and valley-polarized quantum Hall edge states in graphene
- Selective equilibration of spin and valley polarized quantum Hall edge states in graphene
- Electrical Transport in High Quality Graphene pnp Junctions
- Real-space imaging of quantum Hall effect edge strips
- Colloquium: Comparison of Astrophysical and Terrestrial Frequency Standards
- Quantum Hall resistances of multiterminal top-gated graphene device
- Interference features in scanning gate conductance maps of quantum point contacts with disorder
- Imaging fractional incompressible stripes in integer quantum Hall systems
- Selective control of edge-channel trajectories by scanning gate microscopy
- Aharonov-Bohm interferometer based on n-p junction in graphene nanoribbons
- Theory of Landau level mixing in heavily graded graphene p-n junctions
- Low-temperature quantum transport in CVD-grown single crystal graphene
- Inter-Edge Backscattering in Buried Split-Gate-Defined Graphene Quantum Point Contacts
- Imaging backscattering through impurity-induced antidots in quantum Hall constrictions
- Edge state transport through disordered graphene nanoribbons in the quantum Hall regime
Cited by in corpus (8)
- Upstream modes and antidots poison graphene quantum Hall effect
- Influence of interface dipole layers on the performance of graphene field effect transistors
- Aharonov-Bohm conductance oscillations and current equilibration in local n - p junctions in graphene
- Anomalous periodicity and parafermion hybridization in superconducting qubits
- Scanning gate microscopy in graphene nanostructures
- Imaging signatures of the local density of states in an electronic cavity
- Negative longitudinal resistance of monolayer graphene in the quantum Hall regime
- Supercurrent modulation in InSb nanoflag-based Josephson junctions by scanning gate microscopy