Inter-Edge Backscattering in Buried Split-Gate-Defined Graphene Quantum Point Contacts
arXiv:1608.07503 · doi:10.1103/PhysRevB.94.155446
Abstract
Quantum Hall effects offer a formidable playground for the investigation of quantum transport phenomena. Edge modes can be detected, branched, and mixed by designing a suitable potential landscape in a two-dimensional conducting system subject to a strong magnetic field. In the present work, we demonstrate a buried split-gate architecture and use it to control electron conduction in large-scale single-crystal monolayer graphene grown by chemical vapor deposition. The control of the edge trajectories is demonstrated by the observation of various fractional quantum resistances, as a result of a controllable inter-edge scattering. Experimental data are successfully modeled both numerically and within the Landauer-Buettiker formalism. Our architecture is particularly promising and unique in view of the investigation of quantum transport via scanning probe microscopy, since graphene constitutes the topmost layer of the device. For this reason, it can be approached and perturbed by a scanning probe down to the limit of mechanical contact.
References in corpus (13)
- Electric Field Effect in Atomically Thin Carbon Films
- Chiral tunneling and the Klein paradox in graphene
- Evidence of Klein tunneling in graphene p-n junctions
- Landau Level Splitting in Graphene in High Magnetic Fields
- Transport measurements across a tunable potential barrier in graphene
- Electronic transport and quantum Hall effect in bipolar graphene p-n-p junction
- Quantized Transport in Graphene p-n Junctions in Magnetic Field
- Conductance of p-n-p graphene structures with 'air-bridge' top gates
- Rapid CVD growth of millimetre-sized single crystal graphene using a cold-wall reactor
- Scalable Tight-Binding Model for Graphene
- Gate-Defined Graphene Quantum Point Contact in the Quantum Hall Regime
- Imaging fractional incompressible stripes in integer quantum Hall systems
- Imaging backscattering through impurity-induced antidots in quantum Hall constrictions