Direct-Write Printed Contacts to Layered and 2D Materials
arXiv:2503.11691 · doi:10.1002/aelm.202400927
Abstract
Advancements in fabrication methods have shaped new computing device technologies. Among these methods, depositing electrical contacts to the channel material is fundamental to device characterization. Novel layered and two-dimensional (2D) materials are promising for next-generation computing electronic channel materials. Direct-write printing of conductive inks is introduced as a surprisingly effective, significantly faster, and cleaner method to contact different classes of layered materials, including graphene (semi-metal), MoS2 (semiconductor), Bi-2212 (superconductor), and Fe5GeTe2 (metallic ferromagnet). Based on the electrical response, the quality of the printed contacts is comparable to what is achievable with resist-based lithography techniques. These devices are tested by sweeping gate voltage, temperature, and magnetic field to show that the materials remain pristine post-processing. This work demonstrates that direct-write printing is an agile method for prototyping and characterizing the electrical properties of novel layered materials.
References in corpus (19)
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Boron nitride substrates for high-quality graphene electronics
- Anomalous Hall effect
- Mobility engineering and metal-insulator transition in monolayer MoS2
- Magnetic 2D materials and heterostructures
- Charged Impurity Scattering in Graphene
- A self-consistent theory for graphene transport
- Measurement of Scattering Rate and Minimum Conductivity in Graphene
- Towards barrier free contact to MoS2 using graphene electrodes
- Growth of Two-dimensional Compound Materials: Controllability, Material Quality, and Growth Mechanism
- Atomically-thin Ohmic Edge Contacts Between Two-dimensional Materials
- Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers
- Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper
- Sign reversing Hall effect in atomically thin high temperature superconductors
- Via Method for Lithography Free Contact and Preservation of 2D Materials
- Coexistence of Merons with Skyrmions in the Centrosymmetric van der Waals Ferromagnet Fe5GeTe2
- A Cleanroom in a Glovebox
- Andreev Reflection and Klein Tunneling in High-Temperature Superconductor/Graphene Junctions