Assembly of High-Performance van der Waals Devices Using Commercial Polyvinyl Chloride Films
arXiv:2505.08579 · doi:10.1038/s41598-025-34621-z
Abstract
Control over the position, orientation, and stacking order of two-dimensional (2D) materials within van der Waals heterostructures is crucial for applications in electronics, spintronics, optics, and sensing. The most popular strategy for assembling 2D materials uses purpose-built stamps with working surfaces made from one of several different polymers. However, these stamps typically require tedious preparation steps and suffer from poor durability, contamination, and limited applicability to specific 2D materials or surfaces. Here, we demonstrate significant improvements upon current 2D flake transfer and assembly practices by using mechanically durable stamps made from polyvinyl chloride (PVC) thin films. These stamps are simpler to prepare compared with existing methods and can withstand multiple transfer cycles, enabling greater reusability. We use two commercially available PVC films with distinct pick-up and release temperatures. Together, these films also enable polymer-to-polymer flake transfers and stack-and-flip fabrication of inverted heterostructures in one seamless process. Systematic comparisons of cleaning processes confirm the removal of PVC-derived residue from the assembled structures to create atomically clean interfaces. We demonstrate the utility and versatility of these polymer films and transfer process by fabricating graphene/hexagonal boron nitride heterostructure devices with high-performance electrical characteristics. Further, we demonstrate the ability to pick up and to deposit bulk aluminum gallium arsenide nanostructured films, enabling the creation of heterogeneously integrated devices. This technique increases fabrication rates, improves device quality, and enables more complex structures, thereby facilitating nanomaterial assembly in a broad range of applications.
References in corpus (24)
- Electric Field Effect in Atomically Thin Carbon Films
- Two-Dimensional Gas of Massless Dirac Fermions in Graphene
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Magic-angle graphene superlattices: a new platform for unconventional superconductivity
- 2D materials and van der Waals heterostructures
- Boron nitride substrates for high-quality graphene electronics
- Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
- Charged Impurity Scattering in Graphene
- Measurement of Scattering Rate and Minimum Conductivity in Graphene
- Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
- Magic Angle Spectroscopy
- Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials
- Current-induced cleaning of graphene
- Cleaning Interfaces in Layered Materials Heterostructures
- Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene
- Signatures of bilayer Wigner crystals in a transition metal dichalcogenide heterostructure
- A circular dielectric grating for vertical extraction of single quantum dot emission
- Nanoscale mapping and spectroscopy of non-radiative hyperbolic modes in hexagonal boron nitride nanostructures
- Edge Channels of Broken-Symmetry Quantum Hall States in Graphene probed by Atomic Force Microscopy
- Highly Accurate, Reliable and Non-Contaminating Two-Dimensional Material Transfer System
- Thermal release tape-assisted semiconductor membrane transfer process for hybrid photonic devices embedding quantum emitters
- Direct-Write Printed Contacts to Layered and 2D Materials
- Geometric interference in a high-mobility graphene annulus p-n junction device
- Quantum Hall Transport Measurements of Lateral p-n Junctions Formed via Precise Spatial Photodoping of Graphene/hBN Heterostructures